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| 2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A (Z) Rev.1 Jun. 2001 Features * Small size package: MPAK (SC-59A) * Large Maximum current: IC = 1 A * Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) * High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) * Complementary pair with 2SB1691 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WM-". 2SD2655 Absolute Maximum Ratings (Ta = 25 C) Item Collector to Base Voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Ratings 60 50 6 1 2 800* 150 -55 to +150 Unit V V V A A mW C C *When using alumina ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25 C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 50 6 200 Typ 0.16 0.91 280 4.2 Max 100 100 500 0.3 1.2 Unit V V V nA nA V V MHz pF Test Condition IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A IC = 0.5 A, IB = 0.05 A, Pulse test IC = 0.5 A, IB = 0.05 A, Pulse test VCE = 2 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Rev.1, Jun. 2001, page 2 of 6 2SD2655 Maximum Collector Dissipation Curve Pc (mW) Typical Output Characteristics (1) 200 Pulse IC (mA) IB = 3 50 A 1200 When using alumina ceramic board S = 25 mm x 60 mm, t = 0.7 mm 1000 Collector Power Dissipation 300 A 800 Collector Current 100 250 A 200 A 400 150 A 100 A 50 A 200 0 50 100 150 Ta 200 (C) 0 2 4 6 8 10 Ambient Temperature Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) 500 Ic (mA) 6mA 5mA Typical transfer Characteristics 1000 V CE = 2V Pulse Collector Current IC (mA) 4mA 3mA 2mA 400 100 Collector Current 300 IB = 1mA 200 10 100 Pulse 0 0.4 0.8 1.2 1.6 2.0 1 0 0.2 0.4 0.6 0.8 VBE (V) 1.0 Base to Emitter Voltage Collector to Emitter Voltage VCE (V) Rev.1, Jun. 2001, page 3 of 6 2SD2655 DC Current Transfer Ratio vs. Collector Current 1000 hFE Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 1 VBE(sat) DC Current Transfer Ratio 100 0.1 VCE(sat) 0.01 10 VCE = 2V Pulse 1 1 10 100 1000 IC/IB = 10 Pulse 1 10 100 1000 0.001 Collector Current IC (mA) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 500 fT (MHz) 1000 f = 1MHz IE = 0 VCE = 2V Pulse 400 Gain Bandwidth Product 100 300 200 10 100 0 1 10 Collector Current 100 IC (mA) 1000 1 0.1 1 10 VCB 100 (V) Collector to Base Voltage Rev.1, Jun. 2001, page 4 of 6 2SD2655 Package Dimensions As of January, 2001 Unit: mm 0.65 0.10 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK -- Conforms 0.011 g Rev.1, Jun. 2001, page 5 of 6 2SD2655 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.1, Jun. 2001, page 6 of 6 |
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